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Abstract #2723

Noise Figure and Gain Comparison of GaAs and SiGe Semiconductors at High B0 Field Strength

Russell Lagore1, Al-Karim A. Damji1, Alan H. Wilman1, Nicola De Zanche2

1Biomedical Engineering, University of Alberta, Edmonton, Alberta, Canada; 2Department of Oncology, University of Alberta, Edmonton, Alberta, Canada

Gallium Arsenide (GaAs) and Silicon Germanium (SiGe) semiconductor devices behave differently in terms of gain and noise figure as B0 field strength increases and orientation varies. SiGe devices are essentially immune to B0 field variation while the more common GaAs devices are highly sensitive.

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